small signal product creat by art - high voltage switching device - ideal for automated placement - hermetically sealed glass - compression bonded construction - all external surfaces are corrosion resistant and leads are readily solderable - rohs compliant - polarity: indicated by black cathode band symbol unit p d mw v rrm v i f(av) ma t j , t stg o c electrical characteristics symbol unit v f v r ja o c/w c j pf t rr ns document number: ds_s1501002 version: b15 bav100 v r = 50 v i f = 100 ma (note) v r = 0 , f = 1.0 mhz i r thermal resistance, junction to ambient average rectified forward current repetitive peak reverse voltage power dissipation pulse width = 1.0 s pulse width = 1.0 s bav103 i r = 100 a bav102 i r = 100 a bav101 i r = 100 a bav100 i r = 100 a breakdown voltage reverse recovery time - 50 notes : reverse recovery test conditions : i f = i r = 30 ma , i rr = 30 ma , r l = 100 ? i fsm parameter operating and storage temperature range b v bav103 v r = 200 v peak reverse current junction capacitance -5.0 350 - 100 na 100 100 100 bav102 v r = 150 v bav101 v r = 100 v v 120 200 250 forward voltage -1.0 min max 60 - non-repetitive peak forward surge current a 4.0 -65 to +200 500 250 200 maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter value 1.0 bav100/101/102/103 taiwan semiconductor hermeticall y sealed glass hi g h volta g e switchin g diodes features mini melf mechanical data
small signal product creat by art (t a =25c unless otherwise noted) document number: ds_s1501002 version: b15 bav100/101/102/103 taiwan semiconductor ratings and characteristics curves 0.1 1 10 100 1000 0 0.4 0.8 1.2 1.6 2 i f - forward current (ma) v f - forward voltage (v) fig. 2 forward current vs. forward voltage scattering limit 0.01 0.1 1 10 100 1000 0 40 80 120 160 200 i r - reverse current (ua) t j - junction temperature ( o c) fig. 1 reverse current vs. junction temperature v r = v rrm 1 10 100 1000 0.1 1 10 100 r f - differential forward resistance (ohm) i f - forward current (ma) t j =25 o c scattering limit fig. 3 differential forward resistance vs. forward current
dimensions min max min max a 3.30 3.70 0.130 0.146 b 1.40 1.60 0.055 0.063 c 0.20 0.50 0.008 0.020 suggested pad layout a b c d document number: ds_s1501002 version: b15 5.00 0.197 1.25 0.049 2.00 0.079 2.50 0.098 dim. unit (mm) unit (inch) dim. unit (mm) unit (inch) typ. typ. bav100/101/102/103 taiwan semiconductor small signal product order information (example) mini melf bav100 l0g green compound ? code packing ? code part ? no. c b a
small signal product assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_s1501002 version: b15 bav100/101/102/103 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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